vishay siliconix sud50n04-25p document number: 74415 s-81956-rev. b, 25-aug-08 www.vishay.com 1 n-channel 40-v (d-s), 175 c mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested applications ? lcd tv inverter ? secondary synchronous rectifier product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 40 0.020 at v gs = 10 v 20 11.4 nc 0.025 at v gs = 4.5 v 20 to-252 s gd top v ie w drain connected to ta b orderin g information: sud50 n 04-25p-e3 (lead (p b )-free) n-channel mosfet g d s notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 16 continuous drain current (t j = 150 c) t c = 25 c i d 20 a a t c = 100 c 18.9 t a = 25 c 8.5 b t a = 100 c 4.9 b pulsed drain current i dm 50 continuous source-drain diode current t c = 25 c i s 20 a t a = 25 c 2.3 b single pulse avalanche current l = 0.1 mh i as 20 avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 28.8 w t c = 100 c 14.4 t a = 25 c 2.8 b t a = 100 c 1.4 b operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b steady state r thja 43 52 c/w maximum junction-to-case steady state r thjc 4.3 5.2 rohs compliant
www.vishay.com 2 document number: 74415 s-81956-rev. b, 25-aug-08 vishay siliconix sud50n04-25p notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 v v ds temperature coefficient v ds /t j i d = 250 a 37 mv/c v gs(th) temperature coefficient v gs(th) /t j 5.3 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.6 v gate-source leakage i gss v ds = 0 v, v gs = 16 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 100 c 20 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a 0.016 0.020 v gs = 4.5 v, i d = 10 a 0.020 0.025 forward transconductance a g fs v ds = 15 v, i d = 15 a 42 s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz 1195 pf output capacitance c oss 150 reverse transfer capacitance c rss 80 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 30 a 25 38 nc v ds = 20 v, v gs = 4.5 v, i d = 30 a 11.4 18 gate-source charge q gs 3.2 gate-drain charge q gd 4.2 gate resistance r g f = 1 mhz 1.6 2.5 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 0.66 i d ? 30 a, v gen = 4.5 v, r g = 1 13 20 ns rise time t r 14 21 turn-off delay time t d(off) 16 25 fall time t f 714 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 0.66 i d ? 30 a, v gen = 10 v, r g = 1 612 rise time t r 918 turn-off delay time t d(off) 24 36 fall time t f 714 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 20 a pulse diode forward current a i sm 50 body diode voltage v sd i s = 10 a 0.87 1.2 v body diode reverse recovery time t rr i f = 20 a, di/dt = 100 a/s, t j = 25 c 25 38 ns body diode reverse recovery charge q rr 22 33 nc reverse recovery fall time t a 17 ns reverse recovery rise time t b 8
document number: 74415 s-81956-rev. b, 25-aug-08 www.vishay.com 3 vishay siliconix sud50n04-25p typical characteristics 25 c, unless otherwise noted output characteristics transconductance on-resistance vs. gate-to-source voltage 0 16 32 4 8 64 8 0 012345 v gs = 10 thr u 5 v 3 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 4 v 0 16 32 4 8 64 8 0 04 8 12 16 20 ) s ( e c n a t c u d n o c s n a r t - g s f t c = - 55 c 25 c 125 c i d - drain c u rrent (a) 0.00 0.02 0.04 0.06 0.0 8 0.10 01234567 8 910 ( ) e c n a t s i s e r - n o - r ds(on) v gs - gate-to-so u rce v oltage ( v ) 25 c 125 c i d = 15 a transfer characteristics on-resistance vs. drain current capacitance 0.0 0.4 0. 8 1.2 1.6 2.0 01234 25 c t c = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0.010 0.015 0.020 0.025 0.030 0.035 0.040 016324 8 64 8 0 () e c n a t s i s e r - n o - i d - drain c u rrent (a) r ds(on) v gs = 10 v v gs = 4.5 v c rss 0 360 720 10 8 0 1440 1 8 00 0 8 16 24 32 40 v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c c iss c oss
www.vishay.com 4 document number: 74415 s-81956-rev. b, 25-aug-08 vishay siliconix sud50n04-25p typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage single pulse power, junction-to-ambient 0 2 4 6 8 10 0 6 12 1 8 24 30 ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g i d = 30 a v ds = 20 v v ds = 10 v v ds = 30 v 1.0 1.2 0.001 10 100 0.00 0.2 0.4 0.6 0. 8 t j = 25 c t j = 150 c v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s 1 0.1 0.01 0.001 0 0.1 1 100 0.01 time (s) ( w ) r e w o p 10 30 60 90 120 1 5 0 on-resistance vs. junction temperature threshold voltage single pulse power, junction-to-case ) d e z i l a m r o n ( e c n a t s i s e r - n o - r ds(on) 0.6 0.9 1.2 1.5 1. 8 2 . 1 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) i d = 15 a v gs = 4.5 v v gs = 10 v - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a t j - temperat u re (c) v ) h t ( s g ) v ( i d = 5 ma 0.001 1 10 0.01 time (s) ) w ( r e w o p 0.1 0 30 60 90 120 150
document number: 74415 s-81956-rev. b, 25-aug-08 www.vishay.com 5 vishay siliconix sud50n04-25p typical characteristics 25 c, unless otherwise noted ** the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resist ance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient current derating**, junction-to-ambient 0.01 100 1 100 0.01 ) a ( t n e r r u c n i a r d - i d 0.1 v ds - drain-to-so u rce v oltage ( v ) v gs minim u m v gs at w hich r ds(on) is specified 1 ms 10 ms 100 ms dc 1 s 10 s 0.1 1 10 10 t a = 25 c single p u lse limited b y r ds(on) * b v dss limited * 0 2 4 6 8 10 0 25 50 75 100 125 150 175 t a - am b ient temperat u re (c) i d ) a ( t n e r r u c n i a r d - safe operating area, junction-to-case current derating**, junction-to-case 0.01 100 1 100 0.01 0.1 1 ms 10 ms 100 ms dc 100 s 0.1 1 10 10 t c = 25 c single p u lse limited b y r ds(on) * b v dss limited ) a ( t n e r r u c n i a r d - i d v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 0 6 12 1 8 24 30 0 25 50 75 100 125 150 175 i d ) a ( t n e r r u c n i a r d - t a - case temperat u re (c) package limited
www.vishay.com 6 document number: 74415 s-81956-rev. b, 25-aug-08 vishay siliconix sud50n04-25p typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. power derating*, junction-to-ambient 0.0 0.7 1.4 2.1 2. 8 3 .5 0 25 50 75 100 125 150 175 po w er ( w ) t a - tem p erat u re ( c ) power derating*, junction-to-case 0 7 14 21 2 8 35 0 25 50 75 100 125 150 175 po w er ( w ) t j - temperat u re (c)
vishay siliconix sud50n04-25p document number: 74415 s-81956-rev. b, 25-aug-08 www.vishay.com 7 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74415. normalized thermal transient impedance, junction-to-ambient 0.2 0.1 0.05 0.02 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 52 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1 0.1 0.01 0.05 0.02 single p u lse
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